PART |
Description |
Maker |
AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns 5V 512K x 8 CMOS flash EEPROM, access time 55ns 5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
AM9150-20 AM9150-20DC AM9150-20DCB AM9150-20LC |
1024x4 High-Speed Static R/W RAM
|
Advanced Micro Devices
|
UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
UPB100470D-15 UPB100470D-10 |
4,096 x 1-bit 100K ECL RAM. Access time(max) 15 ns. 4,096 x 1-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
|
UTRON Technology
|
AS7C1026A-10JC AS7C1026A-15JI AS7C31026A-10TI AS7C |
5V 64K x 16 CM0S SRAM , 12ns access time 5V/3.3V 64K X 16 CMOS SRAM 5V 64K x 16 CM0S SRAM , 10ns access time 3.3V 64K x 16 CM0S SRAM , 12ns access time
|
Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
|
A67L7332SERIES A67L7336SERIES A67L8316SERIES A67L8 |
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 256K x 16 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7ns; access time:4ns; 128K x 32 LVTTL, pipelined DBA SRAM 256K X 16/18. 128K X 32/36 LVTTL. Pipelined DBA SRAM 256 × 16/18128K的X 32/36 LVTTL等级。流水线数据库管理员的SRAM 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Cycle time:7ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:7.5ns; access time:4.2ns; 128K x 32 LVTTL, pipelined DBA SRAM Cycle time:8.5ns; access time:4.5ns; 128K x 32 LVTTL, pipelined DBA SRAM
|
AMIC Technology, Corp.
|
5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 59 |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E5 rads(Si).
|
Aeroflex Circuit Technology
|
IDT71124 IDT7112415YGI8 IDT7112420YGI8 IDT71124S12 |
CMOS Static RAM 1 Meg (128K x 8-Bit) Revolutionary Pinout Equal access and cycle times
|
Integrated Device Techn...
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
CDP68HC68T107 |
CMOS Serial Real-Time Clock With RAM and Power Sense/Control
|
Intersil Corporation
|